Performance Analysis of Negative Capacitance Field Effect Transistor using Lithium Niobate

Negative Capacitance Field-Effect Transistor (NCFET) is an emerging innovation that consolidates a ferroelectric layer inside the semiconductor door stack to combat the essential furthest reaches of sub-limit swing in semiconductors. NCFETs utilize a ferroelectric layer within the transistor's gate. A Lithium Niobate (LiNbO
3
) layer within the transistor's gate is employed for voltage amplification. An I-V model for NCFETs utilizing LiNbO
3
as the ferroelectric material is proposed here, along with the derived polarization values. Here, numerical demonstrating is used, and the outcomes are approved with a written summary. The impact of ferroelectric thickness and channel doping concentration on the performance of NCFET devices was investigated. The surface potential was calculated at various thickness of the ferroelectric layer, and the I
DS
-V
GS
properties of the proposed NCFET structure were shown. The surface potential is calculated using Landau-Khalatnikov (LK) equation and the Poisson's equation. The current drive and threshold voltage has raised exceptionally along with the polarization field which has about 16% enhancement when compared to the earlier works.