Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited)

A stress and measurement sequence is presented for the detection of plasma induced damage instabilities during process reliability monitoring on product wafers of integrated circuit mass production. The significance of a lifetime estimation from data of antenna test structures is demonstrated with respect to automotive quality requirements in contrary to commonly used approaches in industry. It is shown that a comprehensive approach is necessary starting with appropriate test structures, the PID process qualification and the definition of sophisticated design rules. A short constant current stress as revealing reliability stress for hidden damage fulfills the demands and is discussed in detail including a literature review.