Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacks

We propose a geometric statistical model to describe stress-induced leakage current (SILC) as a function of trap density (D
ot
). We demonstrate how soft breakdown measured on smaller devices is controlled by a 2-trap percolation path and how its voltage dependence coincides with the 1 to 2 traps transition of SILC measured on larger devices. Finally, assuming the high-k as the breaking layer, we convert the 1-trap leakage current into D
ot
.