Pre-O2 treatment for LNA gate oxide leakage improvement

Gate oxide leakage issue is one of key reliability concern as transistor is scaled down. The prominent leakage was observed in SiON based thin gate oxide of LNA which is related to under optimized interface between gate oxide and active silicon. A pre-nitridation O2 treatment were introduced to significantly suppress the trap assist tunneling behavior and enhanced the gate oxide TDDB performance without degrading the DC electrical and RF performance of the 5G LNA device. This process optimization also benefits the manufacturability in mass production.