Novel Electrical Detection Method for Random Defects on Peripheral Circuits in NAND Flash Memory

We propose an electrical detection method for peripheral circuit (PERI) ‘open’ random defects. This brand new screening methodology detects only PERI defects by independently controlling the supply voltage (V
DD
) of each circuitry array at low temperature. The proposed method is confirmed based on experimental, simulation, and physical analysis results. Compared with conventional function test items, our proposed method shows >50% error reduction.