Single-Event Latchup Vulnerability at the 7-nm FinFET Node

At the 7-nm bulk FinFET node, latchup effects are seen as limited current increases. In this work, 7-nm node latchup susceptibility is evaluated for terrestrial and space environments as a function of supply voltage, temperature, and particle LET. Holding voltage for latchups is strongly dependent on temperature and was observed to be within 100 mV of nominal supply voltage, showing latchup can be sustained at elevated supply voltages Latchup SE cross-section increases with increasing particle LET, increasing supply voltage, and increasing temperature.