Laser-Assisted Simulation of Dose-Rate Effects of Neutron-Irradiated NPN Transistors

Laser-assisted simulation is a fast, simple, and effective method for studying dose-rate effects. However, in some compound radiation environments (e.g., the coexistence of transient
$\gamma $
-rays and neutrons), the effectiveness of laser simulation has not been studied. This article investigates the feasibility of laser-assisted simulation of the dose-rate effects of neutron-irradiated bipolar transistors by using a sequential radiation method. The accuracy of laser simulation is calculated by using peak photocurrent and charge collection as the equivalent factor, respectively. According to the comparison of the transient parameters (e.g., transient rise/fall time, transient duration time, peak magnitude, collected charge, correlation coefficients) between laser and
$\gamma $
-rays, it is proved that the laser-assisted simulation method still works. This means a laser with proper parameters can be used to construct a compound radiation environment with neutron sources, which can provide a powerful solution for the study of the transient co-interaction process of the ionization effects and displacement effects in materials and devices.