Effect of Al-doping in $p$-type $\text{SnO}_{x}$ Thin Film Transistors: Physics and Modeling

In the article, we report the effect of aluminum (Al) doping on the performance enhancement of p-type
$\text{SnO}_{x}$
thin film transistors (TFT). To understand the physics of performance enhancement, we have performed the physical modeling of these materials with density-of-state (DOS) model and performed numerical simulations. Computed current-voltage characteristics were compared with results of fabricated 8 nm thin SnO and Al-doped
$\text{SnO}_{x}$
TFTs on HfO
2
/Si substrate. It was observed that the bandgap, field-effect mobility (
$\mu_{FE}$
) and DOS of SnO are largely affected by Al-doping. An increased
$\mu_{FE}\sim 3.5\ cm^{2} V^{-1}s^{-1}$
was observed for
$\text{Al}-\text{SnO}_{x}$
TFT.