Efficiency Enhancement of Blue Light Emitting Diode using lattice matched Quantum barrier and modified Quantum Well

In this paper we have designed a new optimized LED structure with stepped quantum well and polarization matched quantum barrier with the objective of reducing the polarization without decreasing the carrier density in the active region. An InGaN light emitting diode with stepped quantum well and InGaN barrier is proposed and simulated with the help of well calibrated ATLAS SILVACO simulation tool. The designed LED structure with InGaN barrier and stepped quantum well shows enhanced luminous power and significant reduction in the efficiency droop. The efficiency droop in the proposed structure is declined to 5.2% as compared to 47% in conventional structure at 1A current. The simulation results indicates that these improvement in the proposed structure is the results of enhanced overlapping of carriers in the multiple quantum wells due to reduction of band bending in the active region, which is due to the suppression of the polarization field effectively.