Performance Investigation Of Extended Vertical Double Gate Tunnel Field Effect Transistor

The Extended silicon vertical tunnel field-effect transistor (ESiVDG TFET) is fascinating device at nanometer regime. This article presents DC, AC parameter analysis and a comparison is made with conventional vertical silicon dual metal gate (VSiDMG TFET) in terms of transfer characteristics, output characteristics, transconductance. Moreover, transconductance of 0.4mS/μm, cut-off frequency of 80 GHz and gain-bandwidth-product of 15 GHz is obtained by the proposed device with high ION/ IOFF ratio (~10
¹²
) and it is self-evident that estimating linearity is necessary for determining the device's spectrum of use. As a result, linearity index is calculated in terms of VIP3, IMD3, and IIP3. An impressive result showed by ESiVDG TFET allowing it to be used in low-power applications.