Identifying diverging-effective mass in Mott switching systems for emerging devices

Emerging devices such as a neuromorphic device and a qubit can use the Mott transition phenomenon, but in particular, the diverging mechanism of the phenomenon remains to be clarified. The diverging-effective mass (DEM) near Mott insulators was measured in strongly correlated Mott systems of a fermion He
³
and a Si metal-oxide-semiconductor-field-effect transistor and is closely fitted by the effective mass,
$m^{\star}/m\equiv 1/[1-(U/U_{C})^{2}]=1/(1-d_{BR}\rho^{4})$
when
$\kappa_{BR}\approx 1(\neq 1)$
, where
$0<U/U_{c}=\kappa_{BR}\rho^{2}<1$
, correlation strength is
$\kappa_{BR}$
, band-filling is
$\rho$
. Its identification is a percolation of a constant mass in the Brinkman-Rice picture. Over
$\kappa_{BR}=0.96$
is evaluated.