Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events

Transients with durations of dozens of seconds in a rad-hard four-channel CDS ASIC (XCR4C) for X-ray CCD were observed during
$^{181}\mathbf{Ta}^{31+}$
ions irradiation and were attributed to the complementary feedback mechanism in the bias circuit.