Improvement of Self-Heating in Quantum Dot Reflective Semiconductor Optical Amplifier for SS-OCT Application

In this study, with the application to SS-OCT in mind, the effect of self-heating generated in QD-RSOA was examined by the simulation analysis in order to realize the heterogeneous integration wavelength-variable laser which can sweep the wavelength at high speed with narrow line width, and improvement of the heat radiation property were examined. It was clarified that the heat radiation property can be efficiently improved by thinning the substrate and mounting the p-electrode side toward the chip carrier (submount). It was also shown that the active layer temperature can be suppressed to 97 ℃ at the maximum under the current density of 25 kA/cm
²
by adopting the SiO
2
window structure rather than the BCB embedded structure. And, the characteristic improvement of QD-RSOA was examined by evaluating the saturated optical output power of the QD-LD. The saturated optical output power was compared between the p-side up and down structures in the QD-LD of the BCB embedded structure, and it was possible to obtain approximately twice higher output power in the p-side down structure than that in the p-side up mount structure.