High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High ION/IOFF and High Threshold Voltage

In this letter, we report on demonstrating high-performance enhancement-mode (E-mode)
${p}$
-channel GaN Fin Field-Effect Transistors (FinFETs) fabricated on a proposed
${p}$
-GaN/AlN/AlGaN epitaxial structure with a low sheet resistance of 14
$\text{k}\Omega / {\unicode{0x25A1}} $
. Benefiting from the 25-nm-wide GaN nanowires channel and tri-gate architecture, high threshold voltage (
${V}_{\text{TH}}$
) of −2.2 V and low subthreshold swing (
SS
) of 130 mV/dec were obtained. Meanwhile, owing to the removal of etching damage in the recessed region and the post gate annealing, high drain current density of 18.5 mA/mm and high
${I}_{ \mathrm{\scriptscriptstyle ON}} / I_{ \mathrm{\scriptscriptstyle OFF}}$
ratio of
$3\times10$
⁸
were acquired. The E-mode
${p}$
-channel GaN FinFET fabricated on the reformative epitaxial structure with lower sheet resistance shows the potential to be one step closer to realizing the vision of GaN CMOS technology.