A New IGBT Over-Voltage and Over-Current Protection Method Based on Active Clamp Technology

This paper describes a new insulated gate bipolar translators (IGBT) over-voltage and over-current protection method based on active clamp technology. This method can help to reduce the protection time of IGBT at over-voltage, which allows the protection circuit to protect the IGBT in hundreds of nanoseconds. The pulse modulator can be effectively protected when multiple IGBTs are used in series to form the pulse and prevent the damage of each device. Through the tests, superior characteristics of the proposed method has been confirmed.