Physics and Innovative Technologies in SiC Power Devices

Recent progress in mobility characterization, junction breakdown, and MOS interface of SiC is reviewed. A high electron mobility of 1,210 cm
²
/Vs was attained along the
$c$
-axis. An unusually small electron impact ionization coefficient along the c-axis gives this material an artificially high critical electric field (2–5 MV/cm). By excluding oxidation of SiC while adopting H2 etching and interface nitridation, a low interface state density of
$3-6\times 10^{10}$
cm
⁻²
eV
⁻¹
was achieved in SiC MOS structures, which resulted in two-fold improvement of channel mobility.