Forming-free and Annealing-free V/VOx/HfWOx/Pt Device Exhibiting Reconfigurable Threshold and Resistive switching with high speed (<30ns) and high endurance (>1012/>1010)

For the first time, we experimentally demonstrated the fully reconfigurable switching between selector and RRAM in one V/VO
x
/HfWO
x
/Pt device while with no electroforming or high-temperature annealing processes during fabrication. In the same device: (1) Ultra-high endurance (>10
¹²
), high operation speed (<30ns) and excellent threshold stability (variation <5.7%) are demonstrated in the selector mode which is attributed to threshold switching (TS) characteristics of VO
x
; (2) High on-off ratio (>10
³
), high endurance (>10
¹⁰
) and reduction of the leakage current with two orders of magnitude are achieved in the RRAM mode resulted from resistive switching (RS) characteristics of HfWO
x
. These reproducible volatile and non-volatile switching properties are further utilized to emulate electronic neurons and synapses, respectively, and in this way the V/VO
x
/HfWO
x
/Pt-based fully memristive spiking neural network can be realized at a dramatically reduced lentency (∼500 ns) and power consumption (∼10 fJ/per operation for one synapse).