3D Numerical Simulation and Electrical Performance Analysis of p-channel Cylindrical TFTs for New Man-machine Interface Applications

Thin film transistors using cylindrical geometry are advantageous in scaling down the size of the devices without short-channel effects. This research work designs and analysis the electrical performance of p-channel TFTs with cylindrical technology using the 3D numerical simulator. The SnO material has been chosen for the channel layer because of its better performance than the other p-type oxide semiconductors. The maximum field-effect mobility, On-Off current ratio from the electrical characteristics has been calculated as 0.17 cm
²
/V-s and $0.85 \times 10^{2}$, respectively. The obtained electrical performance is low compared with countertype TFTs. The defect parameters played a significant role in the degradation of the device’s electrical performance.