Steady-state Analysis of Bipolar Transistor

Numerical simulation of semiconductor devices enable the quick obtain of the device physical characteristics. However, the trial productions of the semiconductor devices have the disadvantages of long cycle and high cost. Therefore, it is necessary to carry out numerical simulation investigating semiconductor devices. We propose the coupling approach and the decoupling-Gummel method to solve the semiconductor equations. The results of the two methods are compared with the commercial software. Numerical experiment indicates that the results obtained by our method are accurate. When the transistor is at a low voltage bias, the decoupling method converges faster than the coupling method. In the case of high voltage bias, the decoupling method has a slower convergence speed than the coupling method, even difficult to converge for higher voltage bias. However, the coupling method has higher memory requirements than the Gummel method. Therefore, we need to balance the advantages of the coupling method and the Gummel method when conduct the numerical simulation.