Fixed charge-induced mobility degradation and its recovery in MISFETs with Al2O3 gate dielectric

Thin films with high dielectric constant (high-/spl kappa/) have been attracting much attention because of their potential use as alternative gate dielectrics for sub-100 nm MOSFETs. In this paper we investigated the nature of mobility degradation due to the fixed charge for Al/sub 2/O/sub 3/ high-/spl kappa/ gate dielectric. We successfully recovered the mobility to half that of SiO/sub 2/ without EOT increase by controlling the interfacial oxide thickness.