Design of a reliable planar edge termination for SiC power devices

A reliable planar junction edge termination for SiC power devices, using a combination between a junction termination extension (JTE) with a field plate, containing a dielectric (AlN) with a higher dielectric constant than of silicon dioxide, is obtained by way of numerical simulation using ISE-TCAD software. The performance achieved by this combination includes a higher breakdown voltage and an electric field in the insulator below its critical electric field, thus avoiding premature breakdown. In addition, this termination has the advantage that it is not particularly sensitive to the interface charge.