Formation of a double electric layer at the Zn/sub m/In/sub 2/S/sub m+3/ (m=1,2,3) - H/sub 2/O(S/sup 2/-/S/sub 2//sup 2-/) interface

The attempt to explain the mechanism of electric double layer formation at electrolyte H/sub 2/O(S/sup 2-//S/sub 2//sup 2-/) interface with a photoelectrode based on ternary semiconductor compounds ZnIn/sub 2/S/sub 4/ is the purpose of this work. The space charge layer in the semiconductor having thickness L/sub D/=10/sup -3/ cm and electrostatic field value at the electrolyte/semiconductor interface E/spl ap/10/sup 4/ V/cm was calculated.