60-GHz-bandwidth O-band Membrane InGaAlAs Electro-Absorption Modulator on Si Platform

We demonstrate a 60-GHz-bandwidth O-band electro-absorption modulator (EAM) on a Si photonics platform. The EAM consists of an InGaAlAs multiple quantum well with a lateral p-i-n junction, and is fabricated by heterogeneous integration technique. Clear eye opening for 100-Gbit/s non-return-to-zero signal is demonstrated.