Static Performance Assessment of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET Under Severe Temperature

This paper evaluates the static performance of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET under extreme temperatures. The simulated results of JAM-GS-GAA FinFET reveal an 8.22% increase in the drain current and a 20.58% rise in the transconductance compared to the conventional JAM FinFET. The proposed device shows Zero Temperature Coefficient (ZTC) bias point at 0.725 V gate voltage, i.e., the bias point at which the drain current is not affected by the temperature. A reduction in the quality factor, transconductance, and drain current is witnessed with the surge in temperature. Further, temperature influence on several static parameters like electron concentration, electron mobility, total current density, electron velocity, and band energy are explored. It is noticed that with the temperature rise from 300 K to 500 K, the JAM-GS-GAA FinFET static performance degrades.