Simulation Research of 4H-SiC Double-Trench MOSFET with High-k Gate Dielectric Materials

In this paper, a 4H-SiC double-trench metal-oxide-semiconductor field-effect transistor (UMOSFET) with high-k gate dielectric is studied. For its low gate leakage current, strong electric field and many advantages in the application of extreme conditions, high-k gate dielectric has attracted many attentions in our MOSFETs application. Therefore, the electrical characteristics of 4H-SiC double-trench MOSFET with different gate dielectric material were compared through TCAD simulation. The simulation results had shown that with the usage of high-k gate dielectric materials, V
th
decreased, BV decreased, R
on,sp
decreased, Q
gd
decreased and FOM increased. Therefore, high-k gate dielectric material could be a good choice in the 4H-SiC double-trench MOSFETs manufacture for switching and power applications.