Tunnel-Coupled Laser Diode Microarray as a kW-Level 100-ns Pulsed Optical Power Source (λ = 910 nm)

Pulsed 910nm laser sources based on tunnel-coupled AlGaAs/InGaAs/GaAs heterostructures have been developed and studied. To provide the maximum brightness and operation in the linear part of the light-current characteristic, a microarray design was developed. This design includes
$3\times 800$
-
$\mu \text{m}$
-wide stripes in the emitting region. It was demonstrated that, under pumping with 760 A/100 ns current pulses, laser pulse with peak power of 1150 W can be generated. Raising the working temperature led to an insignificant deterioration of emission characteristics, which was manifested by the peak powers of 1030 W/750 A/50°C and 905 W/720 A/75°C.