An analytical method to model the IDS of the MOSFET transistor using a graphene channel

One of the biggest problems in the scale of the MOSFET, has been the short channel effect. A viable alternative that has become very relevant nowadays, is the graphene used as a channel, due to its electrical properties, decreases the negative effects that limit the performance of the devices when exchanging the existing silice technology, to scale to other technologies, with the opportunity to develop devices with thinner channels that allow us the MOSFETs to reach shorter lengths of channel with higher speeds. This material opened a new path in the study of transmission and transport properties in two-dimensional systems, which makes it relevant to work in modeling based on these properties. In this work, a review of the MOSFETs with graphene channel made in recent years, and modeling of the drain source current, I
DS
, with a single-layer graphene channel through a methodological analysis of the engineering of current behavior are presented.