Temperature Sensor Circuit with Dynamic Element Matching in CMOS 65 nm for a mmWave Beamformer

Due to circuit element mismatch occurred during semiconductor fabrication, there exists a discrepancy in performance between the implemented chips and the circuit simulation results. Unfortunately, this discrepancy becomes more severe as a system require higher signal quality. In this paper, a temperature sensor circuit for a mmWave beamformer for 5th generation mobile communication systems is designed and simulated using a CMOS 65 nm process. To obtain highly accurate and robust performance against the circuit element mismatches during the chip production, a dynamic element rotation is exploited because the implementation is simple and occupies small silicon area. According to 1000-run Monte Carlo simulation results, the accuracy of a designed temperature sensor circuit is improved by eight times under a 3- σvariation in sensor biasing currents