Short Word-Line Pulse with Fast Bit-Line Boosting For High Throughput 6T SRAM-based Compute In-memory Design

In order to get over the read disturbance in SRAM-based Compute In-Memory (CIM), 6T SRAM bit-cell with underdrived Word-Line (WL) has been widely adopted. However, underdrived WL suffers from slower Bit-Line (BL) discharge, which eventually increases the CIM latency. In this paper, we propose a short WL pulse with fast BL boosting technique. Short WL pulse approach can efficiently reduce the read disturbance while BL is discharged through BL boosting circuit so that fast BL discharging time is guaranteed with little area overhead and higher reliability. 6T SRAM bit-cell array with BL boosting has been implemented in CMOS 28nm process, and the discharging time is decreased by 63.0% compared to the conventional WL underdrive technique.