HfOx based Ferroelectric Materials and Memories

The discovery of ferroelectric properties in hafnium oxide film in 2011 [1] has been attracting much attention for emerging memory devices and other novel applications. Compared with conventional ferroelectric materials, HfO 2 -based ferroelectric (FE-HfO 2 ) shows several advantages such as high scalability (<10 nm), compatibility with Complementary Metal Oxide Semiconductor (CMOS) technology and 3D integration architecture. Here we will make a brief summary including material, FE-HfO 2 based memory and its application for computing, which present great advantages and potential for future novel memory development.