Investigation of Two Bits With Multistate Antifuse on nMOS Poly-Silicon Junctionless GAA OTP

One-time programmable (OTP) memory is essential to the security and gaming industries because of its “write once, read many” capability. This device supports N-metal–oxide–semiconductor polycrystalline-silicon junctionless gate-all-around (GAA) nanowire transistor technology and can perform multistate antifuse. It is capable of functioning in four states instead of in the standard two states (open/short). Furthermore, the states can be read as fully open (0, 0), drain–gate breakdown (0, 1), source–gate breakdown (1, 0), and full breakdown (1, 1) states. The antifuse is formed from the oxide breakdown between the gate and the source or drain (S/D). Moreover, because multiple samples have been successfully produced, its information can be displayed as a chart or table to instantly convey information about the current device’s state to programmers by reading the S/D current.