A Low Level-Clamped Active Gate Driver for Crosstalk Suppression of SiC MOSFET Based on dv/dt Detection

In order to meet the requirements of high frequency, high efficiency and high power density of power supplies, SiC MOSFETs are increasingly used in various types of power converters due to the low switching loss, high operating frequency and high switching speed. However, the crosstalk problem in the power converters with phase-leg configuration is serious due to the high frequency switching of SiC MOSFET, which could cause the mis-trigger of the complementary SiC MOSFETs in a phase leg, following cause the short circuit fault. To solve crosstalk problem, a low level-clamped active gate driver $(L^{2}$CAGD) based on detecting the dv/dt slope of drain source voltage and the gate voltage in SiC MOSFET is proposed. Then the proposed L
²
CAGD operational principle is analyzed in detail in the next section. Next, the effectiveness and correctness of the proposed L
²
CAGD is verified by simulation and experiment based on a double pulse test circuit with using Infineon 1200V/56A SiC MOSFET. Finally, the conclusion is drawn. The proposed L
²
CAGD provides a reliable gate drive circuit for SiC MOSFETs.