Towards Monolithically Integrated SiGe Optical Receiver with an All-Silicon Photodetector

This paper discusses components design towards implementing a monolithically integrated 850 nm 64 Gbaud PAM-4 optical receiver with an all-silicon photodetector in SiGe BiCMOS process. The elements discussed are the grating coupler, the all-silicon photodetector, and the optical receiver. The study is supported by simulations.