Analysis of Fin Width Influence on the Carrier´s Mobility of Nanowire MOSFETs

In this work, the study of the effective electron mobility (µeff) of n-channel MOS transistor nanowires is presented. By extracting the mobility of the top and sidewall using the surface current separation technique together with the split-CV method. Analyzing the comparison of simulated TCAD results and experimental transistors fabricated with various fin widths (12nm–82nm) and how the effect of varying the fin width and applied substrate voltages interfere with carrier mobility values.