5.9-7.1GHz High-Linearity LNA Using Innovative 3D Device Level Co-Integration of GaN HEMT and RF-SOI

This paper presents the characterization results of a high-linearity LNA designed for the n96 5G frequency band (5.9 - 7.1 GHz). It is based on a 3D heterogeneous integration of GaN HEMT and RF-SOI technologies combining the advantages of both. The LNA amplifying cell is composed of a common source RF-SOI NMOS and a common gate GaN HEMT. The chip is mounted on a PCB and characterized in both small and large signal. The overall performance is well predicted by simulation. The gain is 15.7dB, the input and output are well matched to 500 and the NF is 2.1dB at 6.5GHz. From 6.9 to 7.1GHz, the OIP3 is 28dBm and the OCPI is 13.7dBm. This performance is obtained with a low power consumption of 77.2mW.