BEOL modifications of a 130 nm SiGe BiCMOS technology for monolithic integration of thin-film wafer-level encapsulated D-Band RF-MEMS switches

Diversity in application makes the CMOS technologies interesting for solving the most complex requests from science and consumer electronics. The monolithic integration of MEMS devices into any CMOS technology is one of the most promising approach to reduce the parasitic effects by interconnects and small formfactors, at low production costs by wafer-level fabrication. In this work, an encapsulated RF-MEMS switch for mm-wave and sub-THz frequencies has been monolithically integrated into the AlCu-based Back-End-Of-Line (BEOL) of a 130 nm SiGe BiCMOS technology of IHP by modifications in the standard process flow and device design. The changes of the standard flow are detailed. Finally, a fully functional encapsulated RF-MEMS switch in a BiCMOS process is demonstrated.