Electric Control of Electromagnetically Induced Transparency-like at Terahertz Frequency

We propose an electrically controlled electromagnetically-induced -transparency-like (EIT-like) metasurface combined with high electron mobility transistor (HEMT). The metasurface can be switched between two states by modulating voltage loaded on the gate of HEMT. Modulation depth of 95.9% and the maximum group index of 213.2 are achieved. This kind of electrical control of slow-wave resulting from EIT-like effect has potential applications in terahertz communications.