A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology

A power amplifier (PA) is designed at 3.5 GHz for 5G small-cell base station applications. The proposed PA is implemented in WIN $0.25- \mu m$ GaN HEMT technology. The chip area is $1 \times 1 mm 2$. Measurement results show that, from 3.3 to 3.8 GHz, the input return loss and gain of the PA are greater than 10.2 dB and 12.6 dB, respectively. At 3.5 GHz, the measured $OP _{1dB}$ and the corresponding PAE are 33 dBm (2 W) and 44%, respectively.