A 28/39 GHz Dual-Band Power Amplifier Using Optimal Matching Contour in GaAs pHEMT

In this paper, a dual-band power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is presented. The concept of the optimal matching contour is used in the matching network design to minimize the loss in both operating frequency bands. Thus, this PA achieves good power performance in both frequency bands. The measured results of small-signal gain are 20/12 dB at 28/39 GHz, respectively. The saturated output power (P
sat
) is 21.9/22.7 dBm, the peak power-added efficiency (PAE
max
) is 28.9/32.6%, and the OP
1dB
and corresponding PAE (PAE
1dB
) are 21.8/22.6 dBm and 28/32% at 28/39 GHz, respectively.