Wave-function engineering in In0.53Ga0.47As/InxAl1−xAs core/shell nanowires

We study the electronic properties of In
0.53
Ga
0.47
As/In
x
Al
1−x
As core/shell nanowires for light emission in the telecommunication range. In particular, we systematically investigate the influence of the In content x of the In
x
Al
1−x
As shell and the diameter d of the In
0.53
Ga
0.47
As core on strain distribution, transition energies, and the character of the hole wave function. We show that the character of the hole state, and thus the polarization of the light emitted by such core/shell nanowires, can be easily tuned via these two experimentally accessible parameters.