Bismuth-containing GaAs Core–Shell Nanowires

This work theoretically investigates the electronic and optical properties of GaBi
x
As
1−x
/GaAs core−shell and GaAs/GaBi
x
As
1−x
/GaAs multi-core−shell nanowires. Our results show a large tuning of absorption wavelength (0.9 µ to 1.6 µ) by varying Bi composition and/or nanowire diameters. The computed polarisation dependent optical spectra indicate the possibility to incorporate such nanowires in photonic devices desiring isotropic polarisation response . Overall our work provides a systematic and detailed understanding of bismuth-containing GaAs nanowire optoelectronic properties which could offer new possibilities for future green photonic technologies.