Performance Analysis of Solution Treatment Amorphous Oxide Semiconductor Switching Devices for Display Backplanes

Electronic display screens have become an indispensable product in people’s daily lives with the development of technology. The backplane technology determines the performance of the display screens. Amorphous oxide semiconductor (AOS) is one of the materials of the backplane switching device. It is widely used in the production and development of this field due to its ascendant electronic characteristics, simple and reliable manufacturing process and low production cost. The advantages of electronic performance can be learned from many of the device’s measurement figures and data. It has detailed analysis of different measurement contents. In this paper, two different AOS materials having the same substrate and structure were treated by solution and one of the materials was subjected to molecular beam epitaxy treatment of plasma. They are multi stacked structure indium zinc oxide (IZO) thin film transistor (TFT), indium oxide TFT with passivation and IZO TFT injected into the plasma. Although the active channel layers are different, they all have predominant mobility, on-off current ratio, threshold voltage and subthreshold swing. Mobility can reach up to 8. On-off current ratio can be maintained above 10
⁶
. Other measurements such as stability and inverter drive also show that the device has decent performance. Changes in electronic properties can be observed in more detail. This indicates solution treatment AOS material as switching devices active channel layer is very suitable for the preparation of switching devices.