A multi-stack Al2O3/HfO2 design with contact openings for front surface of Cu(In,Ga)Se2 solar cells

A new multi-stack approach with contact openings was investigated for front surface of Cu(In,Ga)Se
2
thin film solar cells. In this multi-stack design, a thin HfO
x
layer was used to protect a thicker AlO
x
layer from the presence of ammonia in the chemical bath deposition. The contact openings were created by using alkali solution. The lifetime decay was improved by implementing multi-stack passivation layer between CIGS/buffer layer interface. It was shown that open circuit voltage was increased by up to 30mV.