Synthesis and Characterization of Solution Processed Silver Indium Diselenide Thin Films

Silver indium diselenide (AgInSe
2
) is a promising but under-investigated absorber material. In this work, we present a solution processing route to fabricate AgIn(S,Se)
2
thin films and characterize basic electronic properties. We present Hall Effect, Kelvin Probe Force Microscopy (KPFM), and Photoluminescence (PL) results that demonstrate promising characteristics, including high carrier mobilities and benign grain boundaries. We propose that weakly n-type AgInSe
2
should be applied in p-i-n type solar cells, contrary to prior attempts at making p-n AgInSe
2
devices. This will necessitate a careful selection of suitable electron and hole transporting layers.