Hall Effect Measurements to Characterize the Effect of Precursor Composition and Annealing Atmosphere on Solution-Processed CuInSe2 Absorbers

Variable magnetic field Hall effect measurements were used to characterize CuInSe
2
thin films fabricated through solution processing. This characterization revealed the dependence of carrier concentration on the selenium vapor atmosphere during the high temperature growth step, even though no sulfur to selenium conversion occurs when starting from CuInSe
2
precursors. Additionally, the copper to indium ratio of the precursor inks is shown to impact the carrier concentration and mobility of the grown absorbers. This application of Hall effect measurements then shows great potential to better understand and optimize film fabrication conditions for CuInSe
2
and other related absorbers.