Perpendicular anisotropy in a-CoGdZr films, induced by H/sub DC/ applied during deposition

When amorphous Co/sub 95-x/Zr/sub 5/Gd/sub x/ films are prepared by RF sputtering in presence of a DC field applied parallel to the film plane, a perpendicular anisotropy K/sub p/ is obtained for 028. A substrate holder with a specific configuration is used. Its' interest Is explained in detail. The values of K/sub p/ and K/sub u/ are determined by the pressure of the sputter gas P/sub Ar/. When 181, for an optimal P/sub Ar/. The results are explained by a spin reorientation process.