A Novel GaN Bidirectional Current Rectifier Using Self-Quantum Channel Modulation

In high power Light-Emitting Diode (LED) illumination, the alternating current input and LED-compatible monolithic integration of the current regulator driver are demanded. In this work, we firstly report a novel GaN bidirectional current regulator by implementing the self-quantum channel modulation. This modulation is realized by the dynamic expanded space charge region in the p-type GaN layer, which squeezes the current channel, resulting in a stable current. The proposed regulator shows a prospective future in high-power LED illumination applications.