Optimization of deep ultraviolet laser diode using thickness gradient multiple-quantum-well

In order to improve the performance of deep ultraviolet laser diodes, a new multiple-quantum-well with graded thickness is proposed, which can improve the performance of the device by adjusting the thickness of barrier and well in the active region while keeping the total thickness of the active region unchanged. By using Crosslight software, three different multiple-quantum-well structures with constant thickness, increasing thickness and decreasing thickness are simulated and studied, and the characteristics of hole concentration, hole leakage, radiation recombination rate, photoelectric conversion efficiency, threshold current and power are compared. It is concluded that properly adjusting multiple-quantum-well to decreasing thickness can improve the performance of devices.