Selective Energy Contacts and Multi-Wavelength Solution-Processed Quantum Dot Infrared Photodetector

In this work, a three-channel infrared photodetector with three independent related electric signals as a single optoelectronic chip has been introduced. The proposed structure has been implemented by exploiting an array of PbSe/ZnSe quantum dots and the PbSe/ZnS selective energy contacts considering solution-processed nanotechnology. The electron transport system has been designed to allow the transmission of electrons stimulated by three wavelengths simultaneously from different paths to the corresponding output. The high efficiency, simplicity and fabrication ease, cost-effectiveness, and high tunability of the photodetector have been accomplished as a consequence of solution-process technology. Moreover, the dark current has been significantly declined as a consequence of resonance tunneling in the proposed selective energy contacts. Last but not least, our proposed multi-wavelength ( λ
₁
=2.9 μm, λ
₂
=2.25 μm, λ
₃
=1.75 μm) infrared photodetector has been promising candidates for a wideband spectrum analyzer or multi-wavelength infrared camera.