Influence of Key Parameters on the Performance of the Improved Repetitive IPPS With ICCOS

The technology of inverse current commutation with semiconductors (ICCOS) has the ability to reliably commutate high current, which has been demonstrated in related literature. By applying the ICCOS technology to a repetitive inductive pulsed power supply (IPPS), an improved IPPS circuit was presented in our previous work. In the improved circuit, a thyristor replaces the insulated gate bipolar transistor (IGBT) of the previous circuit as the main switch, and a bridge current commutation unit acts as the ICCOS branch. The capacitor voltage in ICCOS has the ability of self-recovery, which adapts to the continuous operation of IPPS. To make the improved IPPS circuit obtain higher performance, the influence of some key circuit parameters is studied in this paper by numerical calculation. It can be concluded that the voltage of the main switch and the ratio of capacitive energy storage can be reduced, the recovery rate of residual energy can be increased, and the residual energy recovery time can be shorten by improving the capacitance C, inductance ratio L
₂
/(L
₂
+ L
_L
), inductance L
₂
and coupling coefficient k. Finally, the preliminary experimental results under various capacitance are presented, which confirms the validity of the numerical calculation.